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Ordering number : ENA1396 ATP208 SANYO Semiconductors DATA SHEET ATP208 Features * * * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 40 20 90 270 60 150 --55 to +150 155 45 Unit V V A A W C C mJ A Note : *1 VDD=15V, L=100H, IAV=45A *2 L100H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=16V, VDS=0V Ratings min 40 1 10 typ max Unit V A A Marking : ATP208 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 11409PA MS IM TC-00001776 No. A1396-1/4 ATP208 Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=1mA VDS=10V, ID=45A ID=45A, VGS=10V ID=23A, VGS=4.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=20V, VGS=10V, ID=90A VDS=20V, VGS=10V, ID=90A VDS=20V, VGS=10V, ID=90A IS=90A, VGS=0V Ratings min 1.5 16 28 4.6 7 4510 535 385 35 400 280 200 83 19 17 1.0 1.2 6.0 9.8 typ max 2.6 Unit V S m m pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 4.6 2.6 0.4 4 7.3 1.7 2 0.5 1 0.8 2.3 2.3 3 9.5 0.55 0.7 0.6 4.6 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK Switching Time Test Circuit 10V 0V VIN VDD=20V 0.1 VIN PW=10s D.C.1% G D ID=45A RL=0.44 VOUT ATP208 P.G 50 S 6.05 No. A1396-2/4 ATP208 90 ID -- VDS V 8.0V 6.0V 80 70 4. 120 10.0 Drain Current, ID -- A Drain Current, ID -- A 4.0V 60 50 40 30 20 16.0V 100 80 60 40 20 0 VGS=3.5V 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1.0 1.5 25 10 C Tc= 75 C --25 C 25 C 5.0 5.5 IT14323 140 160 IT14325 1.4 IT14327 35 40 IT14329 5V 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 16 RDS(on) -- VGS IT14322 14 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 Tc=25C Single pulse 12 10 8 6 4 2 0 --60 ID=23A 45A A =23 , ID 4.5V = VGS A =45 , ID 0.0V =1 VGS 14 16 --40 --20 0 20 40 60 80 100 Gate-to-Source Voltage, VGS -- V 7 | yfs | -- ID C 25 IT14324 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 Case Temperature, Tc -- C IS -- VSD Forward Transfer Admittance, | yfs | -- S 5 3 2 10 7 5 3 2 1.0 VDS=10V VGS=0V Single pulse C -25 =C Tc 75 Source Current, IS -- A 7 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 5 7 100 2 IT14326 0 0.2 0.4 Tc= 75 C 25C --25 C 0.6 0.8 1.0 SW Time -- ID td(off) 10000 7 5 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=20V VGS=10V Ciss, Coss, Crss -- pF 3 2 tf 100 7 5 3 2 10 0.1 1000 7 5 3 2 100 tr Coss Crss td(on) 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 IT14328 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V Tc= --25 C 75C 4.5 120 30 Tc=25C 140 ID -- VGS VDS=10V Single pulse 1.2 f=1MHz No. A1396-3/4 ATP208 10 9 VGS -- Qg VDS=20V ID=90A Drain Current, ID -- A 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=270A PW10s Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 ID=90A 10 s 10 m 0m s s D C 1m 10 0 s 10 s Operation in this area is limited by RDS(on). op at er io n 0.1 Single 2 0.1 Tc=25C pulse 3 5 7 1.0 2 3 5 7 10 2 3 5 7 Total Gate Charge, Qg -- nC 70 PD -- Tc IT14330 120 Drain-to-Source Voltage, VDS -- V EAS -- Ta IT14331 Allowable Power Dissipation, PD -- W 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10478 Case Temperature, Tc -- C IT14332 Ambient Temperature, Ta -- C Note on usage : Since the ATP208 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January , 2009. Specifications and information herein are subject to change without notice. PS No. A1396-4/4 |
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